| PART |
Description |
Maker |
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| SSTS20100D |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045CTL |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBR20100CTF SSBR20100CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
|
| SSBD5L300A |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SMM4F SMM4F5.0A |
High junction temperature Transil
|
STMicroelectronics
|
| TN4015H-6I |
High junction temperature : Tj=150?
|
STMicroelectronics
|
| SMM4F SMM4F10A-TR SMM4F15A-TR SMM4F20A-TR SMM4F18A |
High junction temperature Transil™
|
ST Microelectronics
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| 2SK710 E001574 SK710 |
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
SILICON N CHANNEL JUNCTION TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| BCR12CM-12LB BCR12CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| BCR16CS-12LB BCR16CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
